RF Power Field Effect Transistor
Description
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Freescale Semiconductor Technical Data
Document Number: MRF7S19120N Rev. 0, 9/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Clas...
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