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F7338

International Rectifier
Part Number F7338
Manufacturer International Rectifier
Description IRF7338
Published Jul 21, 2009
Detailed Description www.DataSheet4U.com PD - 94372C IRF7338 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOS...
Datasheet PDF File F7338 PDF File

F7338
F7338

Overview
www.
DataSheet4U.
com PD - 94372C IRF7338 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 D1 D1 N-Ch VDSS 12V P-Ch -12V 3 6 D2 D2 4 5 P-CHANNEL MOSFET RDS(on) 0.
034Ω 0.
150Ω Top View Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics...


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