DatasheetsPDF.com

BLF6G10-45

NXP
Part Number BLF6G10-45
Manufacturer NXP
Description Power LDMOS Transistor
Published Jul 29, 2009
Detailed Description www.DataSheet4U.com BLF6G10-45 Power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1...
Datasheet PDF File BLF6G10-45 PDF File

BLF6G10-45
BLF6G10-45

Overview
www.
DataSheet4U.
com BLF6G10-45 Power LDMOS transistor Rev.
01 — 3 February 2009 Product data sheet 1.
Product profile 1.
1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1.
0 Gp (dB) 22.
5 ηD (%) 7.
8 ACPR (dBc) −48.
5[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)