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2SK4115

Toshiba Semiconductor
Part Number 2SK4115
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Aug 6, 2009
Detailed Description 2SK4115 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ) 2SK4115 Switching Reg...
Datasheet PDF File 2SK4115 PDF File

2SK4115
2SK4115

Overview
2SK4115 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ) 2SK4115 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.
6 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 5.
0 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) 3.
3max.
2.
0 9.
0 20.
0±0.
3 2.
0 Ф3.
2±0.
2 1.
0 4.
5 Unit: mm 15.
9max.
Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 7 21 150 491 7 15 150 −55~150 Unit V 1.
8max.
1.
0 －0.
25 ＋0.
3 5.
45±0.
2 0.
6－0.
1 ＋0.
3 5.
45±0.
2 4.
8max.
1 2 3 2.
8 V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1.
GATE 2.
DRAIN (HEATSINK) 3.
SOURCE JEDEC JEITA TOSHIBA ― SC-65 2−16C1B Weight: 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics 2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.
833 50 Unit °C/W °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C, L = 18.
4 mH, RG = 25 Ω, IAR = 7 A Note 3: R...


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