DatasheetsPDF.com

2SD1601

Part Number	2SD1601
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(...
Datasheet	2SD1601 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2A ·Complement to Type 2SB1101 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg St...

Similar Datasheet

2SD1600 NPN Transistor - INCHANGE
2SD1601 Power Transistor - Inchange Semiconductor
2SD1602 Power Transistor - Inchange Semiconductor
2SD1603 Silicon NPN Darlington Power Transistor - Inchange Semiconductor Company
2SD1603 NPN Transistor - Hitachi Semiconductor
2SD1604 NPN Transistor - Hitachi Semiconductor
2SD1604 Power Transistor - Inchange Semiconductor
2SD1605 Power Transistor - Inchange Semiconductor
2SD1606 Silicon NPN Transistor - Hitachi Semiconductor
2SD1606 Silicon NPN Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)