DatasheetsPDF.com

2SC3480

Inchange Semiconductor
Part Number 2SC3480
Manufacturer Inchange Semiconductor
Description Power Transistor
Published Sep 22, 2009
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High R...
Datasheet PDF File 2SC3480 PDF File

2SC3480
2SC3480

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high definition CRT display horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 3.
5 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3480 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage I...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)