Power Transistor
Description
isc Silicon NPN Power Transistor
2SC3565
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high frequency high voltage amplifier
and TV viedo output applications.
AB...
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