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FDG1024NZ

Fairchild Semiconductor
Part Number FDG1024NZ
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Oct 14, 2009
Detailed Description FDG1024NZ Dual N-Channel Power Trench® MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 17...
Datasheet PDF File FDG1024NZ PDF File

FDG1024NZ
FDG1024NZ

Overview
FDG1024NZ Dual N-Channel Power Trench® MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 1.
2 A, 175 mΩ Features „ Max rDS(on) = 175 mΩ at VGS = 4.
5 V, ID = 1.
2 A „ Max rDS(on) = 215 mΩ at VGS = 2.
5 V, ID = 1.
0 A „ Max rDS(on) = 270 mΩ at VGS = 1.
8 V, ID = 0.
9 A „ Max rDS(on) = 389 mΩ at VGS = 1.
5 V, ID = 0.
8 A „ HBM ESD protection level >2 kV (Note 3) „ Very low level gate drive requirements allowing operation in 3 V circuits (VGS(th) < 1.
5 V) „ Very small package outline SC70-6 „ RoHS Compliant General Description This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.
Th...


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