N-Channel MOSFET
Description
FDMC6675BZ P-Channel PowerTrench® MOSFET
FDMC6675BZ
P-Channel Power Trench® MOSFET
-30 V, -20 A, 14.4 mΩ
Features
Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A HBM ESD protection level of 8 kV typical(note 3) Extended VGSS range (-25 V) for battery applications High performance trench technolo...
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