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IXZ316N60

IXYS Corporation
Part Number IXZ316N60
Manufacturer IXYS Corporation
Description 600V (max) Switch-Mode MOSFETS
Published Oct 29, 2009
Detailed Description IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process ...
Datasheet PDF File IXZ316N60 PDF File

IXZ316N60
IXZ316N60

Overview
IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0 VDSS ID25 RDS(on) PDC = = = = 600 V 18.
0 A 0.
44 Ω 880 W Maximum Ratings 600 600 ±20 ±30 18 90 18 TBD V V V V A A A mJ 5 V/ns >200 V/ns DRAIN PDC PDHS PDAMB RthJC RthJHS www.
DataSheet4U.
com Tc = 25°C, Derate 4.
4W/°C above 25°C Tc = 25°C 880 440 3.
0 W W W GATE 0.
17 C/W 0.
34 C/W Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min.
typ.
max.
V 4.
25 6.
5 ±100 TJ = 25C TJ =125C SG1 SG2 SD1 SD2 Symbol Features VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS,...


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