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IS43R16160A

Integrated Silicon Solution
Part Number IS43R16160A
Manufacturer Integrated Silicon Solution
Description 16Meg x 16 256-MBIT DDR SDRAM
Published Jan 11, 2010
Detailed Description IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM FEATURES ISSI DEVICE OVERVIEW ® PRELIMINARY INFORMATION NOVEMBER 2005 • • ...
Datasheet PDF File IS43R16160A PDF File

IS43R16160A
IS43R16160A


Overview
IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM FEATURES ISSI DEVICE OVERVIEW ® PRELIMINARY INFORMATION NOVEMBER 2005 • • • • • • • • • Clock Frequency: 200, 166 MHz Power supply (VDD and VDDQ) DDR 333: 2.
5V + 0.
2V DDR 400: 2.
6V + 0.
1V SSTL 2 interface Four internal banks to hide row Pre-charge and Active operations Commands and addresses register on positive clock edges (CK) Bi-directional Data Strobe signal for data capture Differential clock inputs (CK and CK) for two data accesses per clock cycle Data Mask feature for Writes supported DLL aligns data I/O and Data Strobe transitions with clock inputs • Half-strength and Full-strength drive strength options • Programmable burst length for Read and Write operations • Programmable CAS Latency (2, 2.
5, or 3 www.
DataSheet4U.
com clocks) • Programmable burst sequence: sequential or interleaved • Burst concatenation and truncation supported for maximum data throughput • Auto Pre-charge option for each Read or Write burst • 8192 refresh cycles every 64ms ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle.
The 268,435,456-bit memory array is internally organized as four banks of 64M-bit to allow concurrent operations.
The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts.
The programmable features of burst length, burst sequence and CAS latency enable further advantages.
The device is available in 16-bit data word size.
Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CK.
Commands are registered on the positive edges of CK.
Auto Refresh, Active Power Down, and Pre-charge Power Down modes are enabled by using clock enable (CKE) and other inputs in an industry-standard sequence.
All input and output voltage levels are compatible with SSTL 2.
KEY TIMING PARAME...



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