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TPC8016-H

Toshiba Semiconductor
Part Number TPC8016-H
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Jan 17, 2010
Detailed Description TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and Hi...
Datasheet PDF File TPC8016-H PDF File

TPC8016-H
TPC8016-H

Overview
TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.
) Low drain-source ON resistance: R DS (ON) = 3.
7 mO (typ.
) High forward transfer admittance: |Yfs| = 25 S (typ.
) Low leakage current: IDSS = 10 µA (max) (V DS = 30 V) Enhancement-mode: V th = 1.
1 to 2.
3 V (V DS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage Drain current DC...


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