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JDH3D01S

Toshiba Semiconductor
Part Number JDH3D01S
Manufacturer Toshiba Semiconductor
Description Diode Silicon Epitaxial Schottky Barrier Type
Published Feb 19, 2010
Detailed Description JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Small package Unit: mm ...
Datasheet PDF File JDH3D01S PDF File

JDH3D01S
JDH3D01S

Overview
JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 −55~125 Unit V mA °C °C 1.
1 ANODE1 1 SSM ｱﾉｰﾄﾞ 2.
CATHODE2 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please ...


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