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TPCP8601

Toshiba Semiconductor
Part Number TPCP8601
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Feb 20, 2010
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TPCP8601 TPCP8601 High-Speed Switching Applications DC-DC ...
Datasheet PDF File TPCP8601 PDF File

TPCP8601
TPCP8601

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TPCP8601 TPCP8601 High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications 0.
33±0.
05 0.
05 M A 8 5 Unit: mm 2.
4±0.
1 2.
8±0.
1 • High DC current gain: hFE = 200 to 500 (IC = −0.
6 A) • Low collector-emitter saturation: VCE (sat) = −0.
19 V (max) • High-speed switching: tf = 35 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) 0.
475 1 4 0.
65 2.
9±0.
1 S 0.
025 S 0.
17±0.
02 B 0.
05 M B A 0.
8±0.
05 0.
28 +0.
1 -0.
11 Characteristic Symbol Rating Unit 1.
12+-00.
.
1132 Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −7 V DC (Note 1) IC C...


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