FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 9.0dB at 5.9GHz to 6.4GHz ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM5964-35SLA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at...
