Schottky Barrier 600 V power Schottky silicon carbide diode
Description
www.DataSheet4U.com
STPSC606
600 V power Schottky silicon carbide diode
Features
■ ■ ■
No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode
K
A K
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap materi...
