RF Power Field Effect Transistors
Description
Freescale Semiconductor Technical Data
Document Number: MD7P19130H Rev. 0, 5/2008
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RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Clas...
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