Power MOSFET
Description
High Current MegaMOSTMFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTK 120N25
VDSS =
ID25
=
= RDS(on)
250 V
120 A 20 mΩ
Symbol Test conditions
VDSS VDGR
VGS VGSM
ID25 ID(RMS) IDM IAR
EAR EAS
dv/dt
PD
TJ TJM Tstg
TL
Md
Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External l...
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