DatasheetsPDF.com

JDV2S10S

Toshiba Semiconductor
Part Number JDV2S10S
Manufacturer Toshiba Semiconductor
Description VCO Diode
Published Apr 14, 2010
Detailed Description JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type www.DataSheet4U.com JDV2S10S VCO for UHF Band Radio • • • High Cap...
Datasheet PDF File JDV2S10S PDF File

JDV2S10S
JDV2S10S

Overview
JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type www.
DataSheet4U.
com JDV2S10S VCO for UHF Band Radio • • • High Capacitance Ratio : C0.
5V/C2.
5V = 2.
5 (typ.
) Low Series Resistance : rs = 0.
35 Ω (typ.
) This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C0.
5V C2.
5V C0.
5V/C2.
5V rs IR = 1 µA VR = 10 V VR = 0.
5 V, f = 1 MHz VR = 2.
5 V, f = 1 MHz  VR = 1 V, f = 470 MHz Test Condition Weight: 0.
0011 g Min 10  7.
3 2.
75 2.
4  Typ.
    2.
5 0.
35 Max  3 8.
4 3.
4  0.
5 Unit V nA pF  Ω Note: Signal level when capacitance is measured: Vsig = 500 mVrms Marking F 000707EAA2 • TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)