Diode
Description
JDV2S14E
TOSHIBA Diode Silicon Epitaxial Planar Type
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JDV2S14E
Useful for VCO/TCXO
Small Package High Capacitance Ratio : C1V/C2.5V = 2.15 (typ.) Low Series Resistance : rs = 0.4 Ω (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 −55~12...
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