DatasheetsPDF.com

IS45S16100C1

Integrated Silicon Solution
Part Number IS45S16100C1
Manufacturer Integrated Silicon Solution
Description 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Published Apr 30, 2010
Detailed Description IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 143 MHz • Full...
Datasheet PDF File IS45S16100C1 PDF File

IS45S16100C1
IS45S16100C1

Overview
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.
3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 4096 refresh cycles every 64 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Byte controlled by LDQM and UDQM • Automotive Temperature Range Option A: 0oC to +70oC Option A1: -40oC to +85oC • Packages: 400-mil 50-pin TSOP-II, 60-ball fBGA • Lead-free package option www.
DataSheet4U.
com ISSI JANUARY 2006 ® DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS45S16100C1 is organized as a 52...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)