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MRF5S9150HR3

Part Number	MRF5S9150HR3
Manufacturer	Freescale Semiconductor
Description	SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
Published	May 31, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N...
Datasheet	MRF5S9150HR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev.
1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz.
Suitable for multicarrier amplifier applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg.
, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13).
Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 19.
7 dB Drain Efficiency — 28.
4% ACPR @ 750 kHz Offset — - 46.
8 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 ...

Similar Datasheet

MRF5S9150HR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs - Freescale Semiconductor
MRF5S9150HSR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs - Freescale Semiconductor

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