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FLL410IK-4C

Part Number	FLL410IK-4C
Manufacturer	Fujitsu
Description	L-Band High Power GaAs FET
Published	Jun 14, 2010
Detailed Description	L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=4...
Datasheet	FLL410IK-4C PDF File

Overview

L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.
0dBm(Typ.
) ・High Gain: GL=11.
5dB(Typ.
) ・High PAE: ηadd=44%(Typ.
) ・Broad Band: 3.
4~3.
7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.
4 – 3.
7 GHz band amplifiers.
This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
FLL410IK-4C www.
DataSheet4U.
com ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC) Item Drain-Source Voltage Gate-Sou...

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