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IXFN180N25T

IXYS
Part Number IXFN180N25T
Manufacturer IXYS
Description GigaMOS Power MOSFET
Published Jul 5, 2010
Detailed Description Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fa...
Datasheet PDF File IXFN180N25T PDF File

IXFN180N25T
IXFN180N25T

Overview
Advance Technical Information www.
DataSheet4U.
com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN180N25T RDS(on) ≤ ≤ trr VDSS ID25 = = 250V 155A 12.
9mΩ 200ns miniBLOC, SOT-227 E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 250 250 ±20 ±30 164 500 40 3 20 900 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g S D G = Gate S = Sourc...


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