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SSM3J36FS

Toshiba Semiconductor
Part Number SSM3J36FS
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 22, 2010
Detailed Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36FS SSM3J36FS ○ Power Management Switches • 1.5-V dri...
Datasheet PDF File SSM3J36FS PDF File

SSM3J36FS
SSM3J36FS

Overview
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36FS SSM3J36FS ○ Power Management Switches • 1.
5-V drive • Low ON-resistance: Ron = 3.
60 Ω (max) (@VGS = -1.
5 V) : Ron = 2.
70 Ω (max) (@VGS = -1.
8 V) : Ron = 1.
60 Ω (max) (@VGS = -2.
8 V) : Ron = 1.
31 Ω (max) (@VGS = -4.
5 V) Absolute Maximum Ratings (Ta = 25 °C) Unit: mm Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDSS -20 V VGSS ±8 V ID -330 mA IDP -660 PD (Note1) 150 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high ...


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