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RJK6024DPD

Renesas Technology
Part Number RJK6024DPD
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Jul 23, 2010
Detailed Description Preliminary www.DataSheet4U.com Datasheet RJK6024DPD Silicon N Channel MOS FET High Speed Power Switching Features  Lo...
Datasheet PDF File RJK6024DPD PDF File

RJK6024DPD
RJK6024DPD

Overview
Preliminary www.
DataSheet4U.
com Datasheet RJK6024DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 28  typ.
(at ID = 0.
2 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting REJ03G1936-0100 Rev.
1.
00 Jun 01, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1.
2.
3.
4.
Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Not...


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