DatasheetsPDF.com

AUIRF3805L

International Rectifier
Part Number AUIRF3805L
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Aug 19, 2010
Detailed Description www.DataSheet4U.com AUTOMOTIVE GRADE PD - 96319 Features l l l l l l l HEXFET® Power MOSFET D AUIRF3805 AUIRF3805S ...
Datasheet PDF File AUIRF3805L PDF File

AUIRF3805L
AUIRF3805L

Overview
www.
DataSheet4U.
com AUTOMOTIVE GRADE PD - 96319 Features l l l l l l l HEXFET® Power MOSFET D AUIRF3805 AUIRF3805S AUIRF3805L 55V 2.
6mΩ 210A c 3.
3mΩ max.
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) typ.
G S ID (Silicon Limited) ID (Package Limited) 160A D D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D G D S G D S G D S TO-220AB AUIRF3805 G D2Pak AUIRF3805S D TO-262 AUIRF3805L S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max.
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (Tested ) IAR EAR TJ TSTG Thermal Resistance RθJC RθCS RθJA RθJA Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Vo...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)