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4AM15

Hitachi Semiconductor
Part Number 4AM15
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel/P-Channel Power MOS FET Array
Published Nov 12, 2010
Detailed Description 4AM15 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resista...
Datasheet PDF File 4AM15 PDF File

4AM15
4AM15

Overview
4AM15 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS(on) ≤ 0.
5 Ω, VGS = 10 V, ID = 2 A P Channel: RDS(on) ≤ 0.
9 Ω, VGS = –10 V, ID = –2 A • • • • Low drive current High speed switching High density mounting Suitable for H-bridged motor driver Outline www.
DataSheet.
in 4AM15 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)*1 IDR Nch 200 ±20 4 16 4 Pch –200 ±20 –4 –16 –4 Unit V V A A A W W °C °C Pch (Tc = 25°C)*2 32 Pch*2 4.
0 150 –55 to +150 Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 Device Operation Tch Tstg 2 www.
DataSheet.
in 4AM15 Electrical Characteristics (Ta = 25°C) N Channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol...


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