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4AM16

Hitachi Semiconductor
Part Number 4AM16
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel/P-Channel Power MOS FET Array
Published Nov 12, 2010
Detailed Description 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resista...
Datasheet PDF File 4AM16 PDF File

4AM16
4AM16

Overview
4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS(on) ≤ 0.
17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.
2 Ω, VGS = –10 V, I D = –4 A • High speed switching • High density mounting • Suitable for H-brided motor driver Outline www.
DataSheet.
in 4AM16 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 Device Operation Tch ...


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