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KM736V787

Samsung Semiconductor
Part Number KM736V787
Manufacturer Samsung Semiconductor
Description 128Kx36 Synchronous SRAM
Published Jan 12, 2011
Detailed Description KM736V787 Document Title 128Kx36-Bit Synchronous Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1...
Datasheet PDF File KM736V787 PDF File

KM736V787
KM736V787

Overview
KM736V787 Document Title 128Kx36-Bit Synchronous Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev.
No.
0.
0 0.
1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics.
Change ISB1 value from 10mA to 30mA.
Change ISB2 value from 10mA to 20mA.
Change Undershoot spec from -3.
0V(pulse width≤20ns) to -2.
0V(pulse width≤tCYC/2) Add Overshoot spec 4.
6V((pulse width≤tCYC/2) Change VIH max from 5.
5V to VDD+0.
5V Change ISB2 value from 20mA to 30mA.
Change VDD condition from VDD=3.
3V+10%/-5% to VDD=3.
3V+0.
3V/-0.
165V.
Final spec Release Add VDDQ Supply voltage( 2.
5V ) Draft Date May.
15.
1997 Feb.
11.
1998 Remark Preliminary Pre...


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