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KM736V789

Part Number	KM736V789
Manufacturer	Samsung Semiconductor
Description	128Kx36 Synchronous SRAM
Published	Jan 12, 2011
Detailed Description	KM736V789 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. N...
Datasheet	KM736V789 PDF File

Overview

KM736V789 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev.
No.
0.
0 0.
1 0.
2 0.
3 History Initial draft Change 7.
5 bin to 7.
2 Change speed symbol 6.
0/6.
7/7.
2/8.
5 to 60/67/72/85 Draft Date May .
15.
1997 January .
13 .
1998 February.
02.
1998 Remark Preliminary Preliminary Preliminary Preliminary Change DC characteristics VDD condition from VDD=3.
3V+10%/-5% Change February.
12.
1998 Input/output leackage currant for ±1µA to ±2µA Modify Read timing & Power down cycle timing.
Change ISB2 value from 30mA to 20mA.
Remove DC characteristics ISB1 - L ver.
& ISB2 - L ver .
Remove Low power version.
Add 119BGA(7x17 Ball Grid Array Package) Chan...

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