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NTD5805N

ON Semiconductor
Part Number NTD5805N
Manufacturer ON Semiconductor
Description Power MOSFET
Published Feb 16, 2011
Detailed Description NTD5805N Power MOSFET Features 40 V, 51 A, Single N−Channel, DPAK • • • • • • • • Low RDS(on) High Current Capability A...
Datasheet PDF File NTD5805N PDF File

NTD5805N
NTD5805N

Overview
NTD5805N Power MOSFET Features 40 V, 51 A, Single N−Channel, DPAK • • • • • • • • Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb−Free Devices LED Backlight Driver CCFL Backlight DC Motor Control Power Supply Secondary Side Synchronous Rectification www.
DataSheet4U.
com http://onsemi.
com V(BR)DSS 40 V RDS(on) MAX 16 mW @ 5.
0 V 9.
5 mW @ 10 V D ID MAX 51 A Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS VGS ID Value 40 "20 "30 51 36 47 85 − 55 to 175 30 80 W A °C A mJ Unit V V V A G S N−CHANNEL MOSFET 4 4 1 2 3 1 tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 40 A, L = 0.
1 mH, VDS = 40 V) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) DPAK CASE 369C (Surface Mount) STYLE 2 3 DPAK CASE 369D (Straight Lead) STYLE 2 2 MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain YWW 58 05NG 4 Drain YWW 58 05NG 1 2 3 Gate Drain Source = Year = Work Week = Device Code = Pb−Free Package Publication Order Number: NTD5805N/D TL 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient − Steady State (Note 1) Symbol RqJC RqJA Value 3.
2 107 Unit °C/W 2 1 Drain 3 Gate Source 1.
Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.
127 in sq [1 oz] including traces.
Y WW 5...


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