18/May/2007
MITSUBISHI SEMICONDUTOR
MGF4941AL
SUPER LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.)
Fig.1
APPLICATION...
