Power MOSFET
Description
Advance Technical Information
PolarTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFP4N100PM
VDSS ID25
RDS(on)
= 1000V = 2.5A ≤ 3.3Ω
OVERMOLDED Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = ...
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