isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3012 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
...
