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PZT194

SeCoS
Part Number PZT194
Manufacturer SeCoS
Description Silicon Planar Medium Power Transistor
Published Jul 16, 2011
Detailed Description PZT194 Elektronische Bauelemente NPN Transistor Silicon Planar Medium Power Transistor RoHS Compliant Product Descript...
Datasheet PDF File PZT194 PDF File

PZT194
PZT194

Overview
PZT194 Elektronische Bauelemente NPN Transistor Silicon Planar Medium Power Transistor RoHS Compliant Product Description www.
DataSheet4U.
net power amplifier SOT-223 The PZT194 is designed for medium applications.
Features * 1 Amps Continous Current * 60 Volt VCEO * Complementary To PZT195 Date Code REF.
A C D E I H 1 9 4 B o C E Millimeter Min.
Max.
6.
70 7.
30 2.
90 3.
10 0.
02 0.
10 0 10 0.
60 0.
80 0.
25 0.
35 REF.
B J 1 2 3 4 5 MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified) Symbol VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Millimeter Min.
Max.
13 TYP.
2.
30 REF.
6.
30 6.
70 6.
30 6.
70 3.
30 3.
70 3.
30 3.
70 1.
40 1.
80 Parameter Value 80 60 5 1 2 200 2 -55~+150 Units V V V A mA W O IC IB PD TJ,Tstg Total Power Dissipation Junction and Storage Temperature o C ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage Base-Emitter Voltage Symbol BVCBO *BVCEO BVEBO I CBO I EBO I CES *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min 80 60 5 100 100 80 30 150 - Typ.
- Max 100 100 100 0.
25 0.
5 1.
1 1.
0 300 10 Unit V V V nA nA nA V V V Test Conditions I C= 100µA, I E=0 I C= 10mA, I B=0 I E= 100µA, IC=0 VCB= 60V, I E=0 VEB=4V,I C=0 VCES = 60V I C=500mA,IB=50 mA I C=1A,IB=100mA I C=1A,IB=100mA I C=1A,VCE=5V VCE= 5 V, I C=1mA VCE= 5 V, I C=500mA VCE= 5 V, I C=1A VCE= 5 V, I C=2A VCE= 10 V, IC= 50 mA, , f=100MHz VCB= 10 V , f=1MHz,IE=0 DC Current Gain Gain-Bandwidth Product Output Capacitance - MH z pF *Measured under pulse condition.
Pulse width¡Ø300µs, Duty Cycle¡Ø 2% http://www.
SeCoSGmbH.
com Any changing of specification will not be informed individual 01-Jun-2002 ...


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