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GT40T302

Toshiba Semiconductor
Part Number GT40T302
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Jul 26, 2011
Detailed Description GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switchin...
Datasheet PDF File GT40T302 PDF File

GT40T302
GT40T302

Overview
GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications Unit: mm • • • • FRD included between emitter and collector Enhancement mode High speed IGBT: tf = 0.
23 μs (typ.
) (IC = 40 A) FRD: trr = 0.
7 μs (typ.
) (di/dt = −20 A/μs) Low saturation voltage: VCE (sat) = 3.
7 V (typ.
) (IC = 40 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1500 ±25 40 80 30 80 200 150 −55 to 150 Unit V V A Diode forward current A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2C Collector power dissipation (T...


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