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2SB1390

Hitachi Semiconductor
Part Number 2SB1390
Manufacturer Hitachi Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description 2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collec...
Datasheet PDF File 2SB1390 PDF File

2SB1390
2SB1390

Overview
2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1.
Base 2.
Collector 3.
Emitter ID 4 kΩ (Typ) 200 Ω (Typ) 3 12 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature C to E diode forward current Note: 1.
Value at TC = 25°C.
Tj Tstg ID* 1 1 Ratings –60 –60 –7 –8 –12 2 25 150 –55 to +150 8 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –60 –60 –7 — — 1000 — — — — — Typ — — — — — — — — — — — Max — — — –10 –10 20000 –1.
5 –3.
0 –2.
0 –3.
5 3.
0 V V V Unit V V V µA Test conditions I C = –0.
1 mA, IE = 0 I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –50 V, IE = 0 VCE = –50 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I D = 8 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1.
Pulse test.
hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD See switching characteristic curve of 2SB1103.
2 2SB1390 Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) –30 iC(peak) Collector current IC (A) –10 IC(max) –3 –1.
0 –0.
3 –0.
1 Ta = 25°C 1 Shot Pulse 20 Area of Safe Operation 1 µs ) µs 5°C 100 s =2 s 1m n(T C 0m = 1 eratio Op DC PW 10 0 50 100 Case temperature TC (°C) 150 –0.
03 –0.
3 –1.
0 –3 –10 –30 –100 –300 Collector to emitter voltage VCE (V) Typical Output Characteristics –10 –5 DC Current Transfer Ratio vs.
Collector Current 10000 VCE = –3 V DC current transfer ratio hFE 5000 TC = 25°C –4.
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