Silicon N / P Channel Power MOS FET
Description
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Preliminary Datasheet
RJM0306JSP
Silicon N / P Channel Power MOS FET High Speed Power Switching
Features
Two elements each of N and P channels are incorporated (suitable for H-bridge circuit) High density mounting Low on-resistance Capable of 4 V gate drive High temperature D-S leakage guarantee Avalanche rating REJ03G1571-010...
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