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2SC1162

Hitachi Semiconductor
Part Number 2SC1162
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description 2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 ...
Datasheet PDF File 2SC1162 PDF File

2SC1162
2SC1162

Overview
2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1.
Emitter 2.
Collector 3.
Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Tj Tstg 1 Ratings 35 35 5 2.
5 3 0.
75 10 150 –55 to +150 Unit V V V A A W W °C °C 2SC1162 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 35 35 5 — 1 Typ — — — — — — 0.
93 0.
5 180 Max — — — 20 320 — 1.
5 1.
0 — Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 35 V, IE = 0 VCE = 2 V, IC = 0.
5 A VCE = 2 V, IC = 1.
5 A (pulse test) Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE* hFE Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Note: B 60 to 120 VBE VCE(sat) fT 60 20 — — — V V MHz VCE = 2 V, IC = 1.
5 A (pulse test) I C = 2 A, IB = 0.
2 A (pulse test) VCE = 2 V, IC = 0.
2 A 1.
The 2SC1162 is grouped by h FE as follows.
C 100 to 200 D 160 to 320 Maximum Collector Dissipation Curve 0.
8 Collector power dissipation PC (W) 0.
75 Collector current IC (A) 0.
6 5 Area of Safe Operation IC(max)(DC Operation) 2 PC = 10 TC = 25°C 1.
0 0.
5 W 0.
4 0.
2 0.
2 0.
1 0 50 100 150 Ambient temperature Ta (°C) 200 1 5 20 50 2 10 Collector to emitter voltage VCE (V) 2 2SC1162 Typical Output Characteristics 2.
0 Collector power dissipation PC (W) Maximum Collector Dissipation Curve 16 Collector current IC (A) 1.
6 TC = 25°C 24 20 17 15 1.
2 12 10 8 6 0.
4 4 2 mA IB = 0 0 50 100 150 200 Case temperature TC (°C) 0 1 3 4 2 5 Collector to emitter voltage VCE (V) 12 8 0.
8 4 Typical Transf...


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