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2SC2532

Part Number	2SC2532
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Epitaxial Type TRANSISTOR
Published	Mar 22, 2005
Detailed Description	2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2532 Audio Frequency Amplifier Applications Dri...
Datasheet	2SC2532 PDF File

Overview

2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2532 Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications Unit: mm • High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 10 V Collector current IC 300 mA Base current IB 60 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C JEDEC TO-236MOD Note: Using continuously under heavy l...

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