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SI5513DC

Vishay Siliconix
Part Number SI5513DC
Manufacturer Vishay Siliconix
Description Complementary MOSFET
Published Jan 20, 2012
Detailed Description www.DataSheet.co.kr Si5513DC Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Chan...
Datasheet PDF File SI5513DC PDF File

SI5513DC
SI5513DC

Overview
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DataSheet.
co.
kr Si5513DC Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel 20 −20 rDS(on) (W) 0.
075 @ VGS = 4.
5 V 0.
134 @ VGS = 2.
5 V 0.
155 @ VGS = −4.
5 V 0.
260 @ VGS = −2.
5 V ID (A) 4.
2 3.
1 −2.
9 −2.
2 Qg (Typ) 4 3 1206-8 ChipFETr 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 G2 G1 Marking Code EB XX Lot Traceability and Date Code S1 N-Channel MOSFET D2 P-Channel MOSFET Bottom View Part # Code Ordering Information: Si5513DC-T1 Si5513DC-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C TA = 25_C TA = 85_C P-Channel 5 secs Steady State −20 "12 Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State 20 Unit V 4.
2 3.
0 10 1.
8 2.
1 1.
1 3.
1 2.
2 0.
9 1.
1 0.
6 −55 to 150 260 −2.
9 ...


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