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2SC2714

Part Number	2SC2714
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Application...
Datasheet	2SC2714 PDF File

Overview

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.
7 pF (typ.
) • Low noise figure: NF = 2.
5dB (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA Base current IB 4 mA Collector power dissipation Junction temperature Storage temperature range PC 100 mW Tj 125 °C Tstg −55 to 125 °C S-MINI JEDEC TO-236 Note: Using continuously under heavy load...

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