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2SC2880

Part Number	2SC2880
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Triple Diffused TRANSISTOR
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications ...
Datasheet	2SC2880 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications · High voltage: VCEO = 150 V · High transition frequency: fT = 120 MHz · Small flat package · PC = 1.
0 to 2.
0 W (mounted on ceramic substrate) · Complementary to 2SA1200 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation VCBO VCEO VEBO IC IB PC PC (Note 1) 200 150 5 50 10 500 800 Junction temperature Storage temperature range Tj 150 Tstg −55 to 150 Note 1: Mounted on ceramic substrate (250 mm2 × 0.
8 t) Unit V V V mA mA mW °C °C...

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