DatasheetsPDF.com

2SC2983

Part Number	2SC2983
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier ...
Datasheet	2SC2983 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications 2SC2983 Unit: mm • High transition frequency: fT = 100 MHz (typ.
) • Complementary to 2SA1225 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C IC IB PC 1.
5 A 0.
3 A 1.
0 W 15 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC JEITA ― ― Note1: Using continuously under heavy loads (e.
g.
the application of high ...

Similar Datasheet

2SC2901 NPN SILICON TRANSISTOR - NEC
2SC2901 NPN Silicon Epitaxial Planar Transistor - SEMTECH
2SC2901 NPN Silicon Epitaxial Planar Transistor - Bluecolour
2SC2901 NPN Silicon Epitaxial Planar Transistor - PACO
2SC2902 NPN Transistor - INCHANGE
2SC2902 SILICON POWER TRANSISTOR - SavantIC
2SC2904 NPN TRANSISTOR - Mitsubishi Electric Semiconductor
2SC2904 NPN SILICON RF POWER TRANSISTOR - ASI
2SC2904 Silicon NPN POWER TRANSISTOR - HGSemi
2SC2905 NPN TRANSISTOR - Mitsubishi Electric Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)