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2SC2995

Toshiba Semiconductor
Part Number 2SC2995
Manufacturer Toshiba Semiconductor
Description Silicon NPN Epitaxial Type TRANSISTOR
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, MIX, OSC, IF High Frequency Amplifier Appl...
Datasheet PDF File 2SC2995 PDF File

2SC2995
2SC2995

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications 2SC2995 Unit: mm · High stability oscillation voltage on FM local oscillator.
· Recommend FM/AM RF, MIX, OSC and IF.
Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 30 4 50 10 200 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.
13 g (typ.
) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain Oscillation output voltage ICBO VCB = 40 V, IE = 0 IEBO VEB = 4 V, IC = 0 hFE (Note) VCE = 6 V, IC = 1 mA C...


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