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2SC3075

Toshiba Semiconductor
Part Number 2SC3075
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 2SC3075 Switching Regulator and High Voltage...
Datasheet PDF File 2SC3075 PDF File

2SC3075
2SC3075


Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications Unit: mm • Excellent switching times: tr = 1.
0 μs (max) tf = 1.
5 μs (max), (IC = 0.
5 A) • High collector breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 500 V 400 V 7 V 0.
8 A 1...



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