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2SC3515

Part Number	2SC3515
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 2SC3515 HIGH Voltage Control Applications Pl...
Datasheet	2SC3515 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications Unit: mm · High voltage: VCBO = 300 V, VCEO = 300 V · Low saturation voltage: VCE (sat) = 0.
5 V (max) · Small collector output capacitance: Cob = 3 pF (typ.
) · Complementary to 2SA1384 · Small flat package · PC = 1.
0 to 2.
0 W (mounted on ceramic substrate) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temper...

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