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2SC3603

Part Number	2SC3603
Manufacturer	NEC
Description	NPN EPITAXIAL SILICON TRANSISTOR
Published	Mar 22, 2005
Detailed Description	DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3...
Datasheet	2SC3603 PDF File

Overview

DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.
5 to 4.
0 GHz.
This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.
PACKAGE DIMENSIONS (in mm) E 3.
8 MIN.
FEATURES • Low noise : NF = 2.
1 dB TYP.
@ f = 2.
0 GHz • High power gain : GA = 10 dB TYP.
@ f = 2.
0 GHz C 3.
8 MIN.
3.
8 MIN.
B PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO...

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