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2SC3665

Toshiba Semiconductor
Part Number 2SC3665
Manufacturer Toshiba Semiconductor
Description NPN EPITAXIAL TYPE TRANSISTOR
Published Mar 22, 2005
Detailed Description 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3665 Audio Power Amplifier Applications Driver-S...
Datasheet PDF File 2SC3665 PDF File

2SC3665
2SC3665


Overview
2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications Unit: mm • Complementary to 2SA1425.
Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 800 80 1000 150 −55 to 150 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-7D101A Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (Note) VCE (sat) VBE fT Cob Test Condition VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 IE = 1 mA, IC = 0 VCE = 5 V, IC = 100 mA IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 500 mA VCE = 5 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Weight: 0.
2 g (typ.
) Min ― ― 120 5 80 ― ― ― ― Typ.
― ― ― ― ― ― ― 120 ― Max 100 100 ― ― 240 1.
0 1.
0 ― 30 Unit nA nA V V V V MHz pF Note: hFE classification O: 80 to 160, Y: 120 to 240 Marking C3665 Part No.
(or abbreviation code) Lot No.
Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1 2004-07-07 Free Datasheet http://www.
datasheet4u.
com/ 2SC3665 IC – VCE 1000 Common emitter 800 15 Ta = 25°C 1000 500 300 hFE – IC Common emitter (mA) Collector current IC 600 5 4 DC current gain 10 7 hFE VCE = 5 V Ta = 100°C 100 50 25 −25 400 3 2 200 IB = 1 mA 0 2 4 6 8 10 12 14 20 3 10 30 100 300 1000 Collector current 0 0 IC (mA) Collector-emitter voltage VCE (V) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) 0.
5 0.
3 Common emitter IC/IB = 10 800 Common emitter VCE = 5 ...


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